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PRELIMINARY
PFM18030SPECIFICATION
18051880MHz,30W,2StagePowerModule EnhancementModeLateralMOSFETs
ThisversatileDCSmoduleprovidesexcellentlinearityandefficiencyina lowcostsurfacemountpackage.ThePFM18030SMincludestwostages PackageType:SurfaceMount ofamplification,alongwithinternalsenseFETsthatareonthesame silicondieastheRFdevices.ThesethermallycoupledsenseFETs PN:PFM18030SM simplifythetaskofbiastemperaturecompensationoftheoverallamplifier. ThemoduleincludesRFinput,interstage,andoutputmatchingelements. Thesourceandloadimpedancesrequiredforoptimumoperationofthe modulearemuchhigher(andsimplertorealize)thanforunmatchedSi LDMOStransistorsofsimilarperformance. Thesurfacemountpackagebaseistypicallysolderedtoaconventional PCBpadwithanarrayofviaholesforgroundingandthermalsinkingof themodule.OptimizedinternalconstructionsupportslowFETchannel temperatureforreliableoperation.
PackageType:Flange PN:PFM18030F
* 29dBGain * 30WattsPeakOutputPower * InternalTrackingFETs (forimprovedbiascontrol)
* IS95CDMAPerformance 5WattsAverageOutputLevel 20%PowerAddedEfficiency -49dBcACPR
ModuleSchematicDiagram
ModuleSubstrate Q1DieCarrier
Q1
Q2DieCarrier
Q2
Drain2 RFOUT
Output Match Lead
Gate1 RFIN
Lead
Input Match
Output Match
Input Match
S1
S2
SenseS1
Lead
Gate2
Lead
SenseS2
Lead
D1
Lead
Note:Additionally,thereare250KOhmresistorsconnectedinshuntwithallleads,toenhanceESDprotection.
Page 1of13
Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/
Rev.3
PFM18030
ElectricalSpecification
Parameter Min
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 OperatingFrequency Gain GainCompressionat Pout=30Watts GainFlatnessoverany 30MHzbandwidth DeviationfromLinear Phaseoverany30 MHzbandwidth GroupDelay ACPRwithIS95A CDMAPave=5W EfficiencyunderIS95 Protocol,Pave=5W DCDrainSupply Voltage Operating TemperatureRange (basetemperature) GainVariationversus Temperature OutputMismatch Stress Stability Thetajc(channel) QuiescentCurrents a) Q1 b) Q2 SenseFETPeriphery Ratio a) Stg1Track b) Stg2Track ESDProtection a)HumanBodyModel b)MachineModel 1805 27.5 45 18 24 40 60
Limits Typ
29.5 0.8 0.1 0.8 3.1 49 20 27 0.033 1.9 73 235
Units Max
1880 32 1.5 0.3 1.2 3.7 30 +115 30 2.1 MHz dB dB dB nanosec dBc % Volts C dB/C Watts CW dBc C/W mA mA Note1.
Comments
PulsedCWcompressionmeasurement (12 msecpulse,120 msecperiod,10% dutycycle). Note1. Note1 Includesdelayoftestfixture (~0.6nanosec.).Note1 Note4.Refertoapplicationsdatafor performancewithotherprotocols. Note4. TestingforconformancewithRF specificationsisat+27V. TestingforconformancewithRF specificationisat+25 C. Biasquiescentcurrentsheldconstant. VSWR10:1,allphaseangles.No degradationinoutputpowerbefore& aftertest. 016
3.0 1.7
% %
17
Class1 ClassM3
Page 2of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/
Rev.3
PFM18030
ElectricalSpecification(Continued)
MAXIMUMRATINGS
Rating
19 DCDrainSupply a) DraintoSourceVoltage,(VGS=0),D1&D2 &TrackD1&TrackD2 b) NormalOperation(ClassABoperation) DCGateSupply a) GatetosourceVoltage(VDS=0) NormalOperation(ClassABoperation) RFInputPower MaximumPowerDissipation(T +85 C) a)Derateabove+85 Cbasetemperature. MaximumChannelOperatingTemperature StorageTemperatureRange
Symbol
VDS VD_SUPPLY VGS VG_SUPPLY PIN PTOTAL TCH TSTG
Value
+50 +30 0.5Units
VoltsDC VoltsDC VoltsDC VoltsDC dBm Watts Watts/C C C
20 21 22 23 24
RECOMMENDEDSOURCEANDLOADIMPEDANCES
Impedance
NominalSource Impedancefor OptimumOperation NominalLoad Impedancefor OptimumOperation 19- 5
Units
Ohms
Comments
Matchedfornearoptimumlinearityandgainflatness. Impedanceislookingfromthemoduleinputleadintothe inputmatchingcircuit.Referenceplaneis0.105inchesfrom theinputend(caseedge)ofthemodule. MatchedfornearoptimumlinearityunderCDMAprotocol. Impedanceis fromthemoduleoutputleadlookingintothe outputmatchingcircuit.Referenceplaneis0.105inchesfrom theoutputend(caseedge)ofthemodule.
22+j6
Ohms
SpecificationNotes:
1) Powertestingofgain,gainflatnessphaseandtimedelaymeasurementswillbeatsmallsignal.Productiontesting willbeforsmallsignalconditions(nominal0dBminputlevel)withthefrequencysweptthroughtheindicatedband. 2) Themoduleismountedinatestfixturewithexternalmatchingelementsforalltesting.Quiescentcurrentbias conditionsarethoseappropriateforminimumACPRunderCDMAprotocol.Supplyvoltageforalltestsis +27voltsDC.Testingisat+25 Cunlessotherwisespecified. 3) Thetajcismeasuredwithapackagemounting(base)tempof+85 C,andwith10WattsCWoutput. 4) Pout=5WattsaverageIS95Aprotocol:IS95ForwardLinkPPS+9CH. ACPRconditions:a)900kHzoffset,30kHzBW,b)2.75MHzoffset,1MHzBW. 5) SenseFETsarescaledversionsofthemainRFFETs,formedfromelectricallyisolatedcellsatendoftheRF structure.Currentscalesaccordingtoperiphery(thresholdvoltagesoffsetislessthan 150millivoltsbetween adjacentdevices).RF&SenseFETgatesandsourcesareDCconnected.DrainsareDCisolated.LeadsS1&S2 areDCconnectedtodrainsofsenseFETs1&2.Sourcesareconnectedtopackagebase.SenseFETsare electricallyisolatedfromtheRFsignals.
Page 3of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/
Rev.3
PFM18030
TypicalModulePerformance
T=+25 C,unlessotherwisenoted.Dataisformoduleinatestfixturewithexternalmatchingelements.Seefollowing pagefortestfixturedetails.
TypicalSmallSignalGainvs.Frequency
31
10
IM3L
TypicalCW2ToneIntermodsvs.OutputPower (F1=1840,F2=1841MHz)
IntermodulationDistortion(dBc)
30
20
IM3U IM5L
29
30
IM5U IM7L IM7U
28
40
27
50
26 1730 1755 1 780 1805 1830 1 855 1880 1905 1930 1955 1980 2005
60
F requency(M Hz)
70 30 31 32 33 34 35 36 37 38 39 40 41 42 43
AverageOutputPower(dBm)
Input&OutputReturnLossvs.Frequency
TypicalCW2ToneIntermodsvs.OutputPower
1 1
(F1=1805,F2=1806MHz)
10 IntermodulationDistortion(dBc)
IM3L
ReturnLoss(dB)
3 OUTPUT 5 7 9 INPUT 11 13 15 1780
20 30 40 50 60 70 30
IM3U IM5L IM5U IM7L IM7U
1805
1830
1855
1880
1905
1930
1955
Frequency(MHz)
31
32
33
34
35
36
37
38
39
40
41
42
43
AverageOutputPower(dBm)
TypicalCWGainvsSweptCWOutputPower, withVariousBiasConditions(F=1840MHz)
31
TypicalCW2ToneIntermodsvs.OutputPower (F1=1880,F2=1881MHz)
10
IM3L
IntermodulationDistortion(dBc)
30
Bestfor2ToneIMDs
29
20 30 40 50 60 70 30
IM3U IM5L IM5U IM7L IM7U
Gain(dB)
28 27 26 25 G(52/184) 24 27 29 31 33 35 37 39 41 43 45
G(65/230) G(58/207) G(71/253)
31
32
33
34
35
36
37
38
39
40
41
42
43
CWSweptOutputPower(dBm)
AverageOutputPower(dBm)
Page 4of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/
Rev.3
PFM18030
PFM18030SMPackageOutline
PFM18030FPackageOutline
Page 5of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/
Rev.3
PFM18030
ModuleApplicationNotes
ThePFM18030SMwasdesignedtoprovideaversatilelowcostsolutionforawidevarietyofwirelessapplications requiring30Wattpeakoutputlevels.ThishybridmodulecontainstwostagesofSiLDMOSFETamplification: anominally5Wattinputstagedrivinga30Wattoutputstage.Themoduleisoptimizedforefficient,linearoperation withEDGEandCDMAsignals.Theinputandoutputofthismodulearepartiallymatched,andrequiresourceandload impedancesofnominally19and21Ohms(muchhigherthantypicallyrequiredbyunmatchedSiLDMOSFETs). ThesesourceandloadimpedancescanbeachievedwithcompactconventionalexternalPCBcircuitry. Performanceforparticularsignalprotocolscanbeimprovedslightlybysmalladjustmentsinquiescentcurrentsand loadimpedancespresentedtothemodule.Thedatapresentedinthepreviouspageswastakenatonesetofquiescent currentsandinafixturewithsourceandloadimpedancesthatwerefixedforallmeasurements.Thedatapresentedis generallyrepresentativeoftheperformanceofthemodule - benefitsfromfurtheroptimizationinquiescentcurrentare small. InadditiontothetwoRFgainstages,thereareSenseFET(thermallytracking)devicesthatserveasoptionalDCcircuit elements.TheSenseFETsarefabricatedonthesameepimaterialwithnominallyidenticalphysicalcharacteristics(but smallergateperiphery)astheRFdevices.Thesensedevicescanbeappliedastemperaturecompensationelementsin conjunctionwithexternalbiascircuitry.Alternatively,thetwostageamplifiercanbeoperatedwiththeSenseFETs unused(S1andS2leadsfloating). Thebaseofthemoduleishighconductivitycopperof40milthickness.ItiswellmatchedtotypicalPCBmaterial,and itservesasaheatspreaderforthedevicewhenmountedas asurfacemountcomponent.Themodulethermal characteristicsweremeasuredwiththeunitsolderedtoa20milthickPCBmaterialwithanarrayofplatedviaholesfor electricalgroundingandthermalsinking.IRscansofthisconfigurationdemonstrated maximumdiechannel temperaturesof142degreesCwithaPCBbasetemperatureof+95degreesC,and10WattsCWoutputpower. Thesemodulescanbeprovidedintapeandreelconfigurationforhighvolumeapplications.Atestfixtureisavailable.
TypicalPCBMountingPattern
Themoduleoutlineisindicatedbydashedline(0.60X1.00inches).Thegroundpadis1.030X0.630 inches.Groundviasinthisexampleare28mildiameteron35mil(or70mil)centers.Thermalresistanceis proportionaltothethicknessofthePCboard(heightofvias),andinverselyproportionaltothetotalground holearrayperiphery(andthicknessofplatingintheholes).Thedenselyspacedviasinthislayout(on35mil spaces)arelocatedinareasofmaximumheatgeneration.Thegapbetweentheleadpadsandthegroundpad is25mils. Theaboveholepatternisanexampleofonethatmaximizesthermaltransfer.Therearenumerous alternativeapproaches.Dependingontheapplication(signalprotocol,thermalenvironment,etc.),the numberofviaholescanbereduced.Highaveragepowerapplicationsrequirethemostextensivethermal sinking. Page 6of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3
PFM18030
RecommendedPassiveBiasCircuit
ThisschematicdemonstratesamethodofapplyingtheSenseFETsinternaltothemodulethatusespassive externalcircuitry.ThecircuitmaintainsaconstantcurrentthroughtheSenseFETS,independentof temperatureofthedie.TheSenseFETsareconfiguredinthiscaseasdiodes.Thetemperaturedependence oftheVfofthediodeisverysimilartothatoftheRFFETgatevoltage,andthereforethequiescentcurrent remainsnearlyconstantoverawidetemperaturerange.Theadvantageofthiscircuitisitssimplicityand stability(avoidanceofoperationalamplifiers)underalllayoutconditions.Themainlimitationofthecircuit isthatquiescentcurrentsmustbeadjustedforeachindividualmodule(theyarenoteasilypresetwith precision).
+10to +20V Gate
GND
+27V
J1
8
7
6
5
4
3
2
1
Note:TypicalQ1diodebias=1.4mA(VG1~3.96V) TypicalQ2diodebias=2.7mA(VG2~4.21V) (basedon6/4/04measurements)
C29 C28 C27
S1 C12 C11 C10 R6
S2
R5
C24 C22 C20
C23 C21 C19 C18 C17 C16 C15 Drain1 R2 C9 C8 C7
C2 RF Out C1 RF OUT PFM18030
SenseD2 Gate2 SenseD1 RFIN C4 C3 C5 R1
R3 RF Input
C6
Page 7of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/
Rev.3
PFM18030
PassiveBiasCircuitPartsList
Designator
C2 C3 C5 C4 C6 C1,C7,C19,C20 C10,C13,C14,C15, C8,C11,C16,C21 C22 C23,C9,C17,C12 C24,C18 R5 R6 R1 R3 C27 C29 C28 S1,S2
Description
CAP,1.8PF0.1pF,0603,ATC600S CAP,2.0PF0.1pF,0603,ATC600S CAP,2.4PF0.1pF,0603,ATC600S CAP,4.7PF0.1pF,0603,ATC600S CAP,4.7PF0.1pF,0603,ATC600S CAP,27PF5%,0603,ATC600S CAP,27PF5%,100V(min),0603,anyvendor. CAP,470PF 10%,100V,0603,anyvendor. CAP,3300PF10%,100V,0603,MurataGRM39X7R332K100??,or equivalent. CAP,15000PF10%,100V,0805,MurataGRM40X7R153K100??, orequivalent. CAP,1500001206,50V,X7R,10% SuggestMurataGRM426X7R154K050ALorequivalent. RES,potentiometer,10Kohms,DigikeySM4W103ND
Qty
1 1 1 1 1 4 4 4 1 4 2 1 1 1 0 1 1 1 2
Note:For+10Vgatesupply.
RES,potentiometer,5Kohms,DigikeySM4W502ND
Note:For+10Vgatesupply
RES,1/16W,0603,1000ohms Notused. CAP,2.2ufSMTTANTALUM,50V(240097) CAP,10uf16VSMTTANTALUM(240096) CAP,47UF,50V,ELECTRSMT(240087) SPSTSwitch, DigikeyPNCKN1100CTND
Page 8of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/
Rev.3
PFM18030
TestFixture
AmetalbackedPCBwithclampsforsecuringthemoduleisusedformoduleelectricaltestingandfor productdemonstration.Thefixtureissuppliedmountedtoafinnedheatsink.Thefixtureschematicis providedonthefollowingpage.
ThistestfixtureusesanactivebiascircuitwhichsetsthebiascircuitthroughtheSenseFETs(configuredas FETs)andappliesthederivedgatevoltagetotheassociatedRFFETs.Thisassuresparticularquiescentbias currents,withaccuracydeterminedbytheSenseFETtoRFFETcurrentratios.
Page 9of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/
Rev.3
PFM18030
TestFixtureSchematic(WithActiveBiasCircuit)
GND +27V +27V OpAmp
J2NotUsedforDemoFixture
J1
8
7
6
5
4
3
2
1
J2
8 7 6 5 4 3 2 1 RZ_FS1 RZ_FS2
C31 R12 R11 C32 R16 R13 4 5 U1
C37 R32 R31
C34 C36 R36 R33 4
C40
R14 C33
LM8261 + 1 3 2 R19 R15
C42 C41 R20 R37 R34 C35
5 LM8261 + 3 2 R35
U2
C43
R39
R40
R38 S2 D2
R17 R18 S1 D1
C28
C27
C26
C12 C11 C10 C25
C24 C22 C20
C23 C21 C19
C14
C9 C18 C17 C16 C15 Drain1 C8 C7
C2 RF Out C1 RF OUT PFM19030SM
SenseD2 Gate2 SenseD1 RFIN C4 C3 C5 C6 R1 R2 RF Input
Seethefollowingpagesforthepartslistandadescriptionoftheprincipleofoperation.Notethatan alternative,lesscomplexpassivebiasschemeisprovidedearlierinthisapplicationnote.Theadvantageof theactivebiasdesignisthatbiascurrentsaresetbytheRFtoSenseFETratios,andoncetheoptimum bias circuitresistor(potentiometer)valuesareestablished,thecircuitcanstayfixedformultiplemodules(thus eliminatingmodulespecificbiasalignment).Additionally,agingeffectsareminimizedbecauseofthe Page 10of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3
PFM18030
similarbiasconditionsforSenseandRFFETs.Thedisadvantageofthisdesignisitsrelativecomplexityand theincorporationofoperationalamplifiers,forwhichstabilityispotentiallycircuitlayoutdependent.
PartsListforCreeMicrowaveTestFixture
Designator
C2 C3 C5 C4 C6 C1,C7,C19,C20 C10,C13,C14,C15, C8,C11,C16,C21 C22 C9,C23,C17,C12 C18,C24,C25,C26, C31,C34 C27,C37 C28 C33,C35 C32,C36 C40,C41,C42,C43 R1 R2 R11,R12 R31,R32 R13,R14,R33,R34 R16,R15,R35,R36 R19,R39 R18 R38 R20,R40 R17,R37 RZ_FS1,RZ_FS2 D1,D2 S1,S2 U1,U2
Description
CAP,1.8PF0.1pF,0603,ATC600S CAP,2.0PF0.1pF,0603,ATC600S CAP,2.4PF0.1pF,0603,ATC600S CAP,4.7PF0.1pF,0603,ATC600S CAP,4.7PF0.1pF,0603,ATC600S CAP,27PF5%,0603,ATC 600S CAP,27PF5%,100V(min),0603,anyvendor. CAP,470PF 10%,100V,0603,anyvendor. CAP,3300PF10%,100V,0603,MurataGRM39X7R332K100 CAP,15000PF10%,100V,0805,MurataGRM40X7R153K100 CAP,1500001206,50V,X7R,10% MurataGRM426X7R154K050AL CAP,2.2ufSMTTANTALUM,50V CAP,47UF,50V,ELECTRSMT CAP,18,000PF 10%,100V,0603 CAP,33,000PF 10%,100V,0603 CAP,1000PF 10%,100V,0603. RES,1/16W,0603,1000ohms,5% Notused RES,1/16W,0603,332Ohms,1% RES,1/16W,0603,147Ohms,1% RES,1/16W, 0603,2370Ohms,1% RES,1/16W,0603,511KOhms,1% RES,1/16W,0603,100KOhms,5% RES,1/16W,0603,3320Ohms,5% RES,1/16W,0603,2000Ohms,5% RES,1/8W,1206,1000Ohms,5% RES,potentiometer,10Kohms,DigikeySM4W103ND,11T RES,1/16W,0805,0Ohms(usedasjumpers,demofixtureonly) Zenerdiode,6.2V,DigikeyPNBZT52C6V27DICTND SPSTSwitch,DigikeyPNCKN1100CTND OpAmp,HighOutput,LM8261M5(5pin,SOT23package)
Qty
1 1 1 1 1 4 4 4 1 4 6 2 1 2 2 4 1 0 2 2 4 4 2 1 1 2 2 2 2 2 2
Itisalsopossibletobiasthetwostagesinaconventionalmanner,withthetwotrackingFETdrainsleft unused(floatingorgrounded).Thebiascircuitspresentedinthisapplicationsnotearejusttwoofseveral possibilities.
Page 11of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/
Rev.3
PFM18030
TestFixtureActiveBiasCircuitPrinciplesofOperation
Thetestfixtureoperatesoffofasinglevoltagesupply.Itcontainstwoswitchesandtwopotentiometers. Theswitchesprovideforindependenton/offfortheinputandoutputdevicesofthemodule.The potentiometersallowadjustmentofquiescentcurrentlevelofeachstage.Theadjustmentsshouldbemade withnoRFappliedtothemodule.
Q1DieCarrier
Q1
Input Match Output Match
Vsupply S1 R1< +
DifferentalAmp
Ids_sense Rbias
Ireference
PrincipalofOperationofBiasCircuitry TheprincipalofoperationofthefixturebiascircuitisdemonstratedintheaboveFigure.Thepotentiometer establishesareferencecurrent,andtheoperationalamplifieradjustsgatevoltagetomaintainthatcurrentin thesensedevice.ThesameDCgatevoltage isalsoappliedtothemain(RF)device.Sensedevicesare scaledversionsofthemain(RF)devices,onthesamedie(tofacilitatetemperaturetracking).Asthe temperatureofthediechangesduetoRFdrive(orambienttemperaturechanges),theoperationalamplifier maintainsconstantcurrentthroughtheSenseFET,andthusconstantquiescentbiasforthemain(RF)FET. NoRFsignalisappliedtotheSenseFET. Thereisaseparateindependentbiascircuitfortheinput(Q1)deviceandfortheoutputdevice(Q2)ofthe module. Experiencehasshownthisbiascircuittobeareliablemethodofmaintainingtightcontrolofquiescent currentoveroperatingtemperature,andforminimizingtheimpactofdeviceagingeffectsonamplifier performance.However,therearesomeprecautionsregardinguseofthiscircuit.Theprincipleofthecircuit isforthedifferentialamplifier(opamp)toadjustgatevoltageuntilthedesiredcurrentisachievedthrough thesenseFETs.Ifthecurrentpathisinterrupted (therebynotallowingIds_sense toflow),theoperational amplifierwillincreasegatebiasinanattempttoincreasecurrent,withthepossibilitythatthequiescentbias currentintheRFFETmayincreasebeyondasafelimit(thedevicemaybedestroyed).Thezenerdiodesin thetestfixturecircuit(D1andD2,testfixtureschematic)aresafeguardsforprohibitingexcessivegate voltagetobeappliedtothetransistors. Page 12of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3
PFM18030
Disclaimer:Specificationsaresubjecttochangewithoutnotice.CreeMicrowave,Inc.believesthe informationcontainedwithinthisdatasheettobeaccurateandreliable.However,noresponsibilityis assumedbyCreeMicrowaveforanyinfringementofpatentsorotherrightsofthirdpartieswhichmay resultfromitsuse.Nolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsof CreeMicrowave.CreeMicrowavemakesnowarranty,representationorguaranteeregardingthe suitabilityofitsproductsforanyparticularpurpose."Typical"parametersaretheaveragevalues expectedbyCreeMicrowaveinlargequantitiesandareprovidedforinformationpurposesonly.These valuescananddovaryindifferentapplications,andactualperformancecanvaryovertime.All operatingparametersshouldbevalidatedbycustomer'stechnicalexpertsforeachapplication.Cree Microwaveproductsarenotdesigned,intended,orauthorizedforuseascomponentsinapplications intendedforsurgicalimplantintothebodyortosupportorsustainlife,inapplicationsinwhichthefailure oftheCreeproductcouldresultinpersonalinjuryordeath,orinapplicationsforplanning,construction, maintenanceordirectoperationofanuclearfacility.CreeMicrowaveisatrademarkandCreeandthe CreelogoareregisteredtrademarksofCree,Inc. ContactInformation: CreeMicrowave,Inc. 160GibraltarCourt Sunnyvale,CA940891319 SheryleHenson(CreeMicrowave--MarketingManager)4089627783 TomDekker(CreeMicrowave--SalesDirector)9193135639
Page 13of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/
Rev.3

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